STD10NM65N
- Description：
- MOSFET N-CH 650V 9A DPAK
- Manufacturer：
- STMicroelectronics
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- MDmesh™ II
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- Rds On (Max) @ Id, Vgs
- 480 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 25nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 850pF @ 50V
- Power - Max
- 90W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- D-Pak
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