PML260SN,118
- Description：
- MOSFET N-CH 200V 8.8A 8HVSON
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 8.8A
- Rds On (Max) @ Id, Vgs
- 294 mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 13.3nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 657pF @ 30V
- Power - Max
- 50W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- 8-DFN3333 (3.3x3.3)
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