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SSM6J08FUTE85LF

Description:
MOSF 20V 1.3A US6
Manufacturer:
Toshiba Semiconductor and Storage
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SSM6J08FUTE85LF

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Rds On (Max) @ Id, Vgs
180 mOhm @ 650mA, 4V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
370pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6

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