SSM6J08FUTE85LF
- Description：
- MOSF 20V 1.3A US6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Ta)
- Rds On (Max) @ Id, Vgs
- 180 mOhm @ 650mA, 4V
- Vgs(th) (Max) @ Id
- -
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 370pF @ 10V
- Power - Max
- 300mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- US6
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