SSM6K217FE,LF
- Description：
- MOSFET N-CH 40V 1.8A ES6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 1.8A (Ta)
- Rds On (Max) @ Id, Vgs
- 195 mOhm @ 1A, 8V
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Gate Charge (Qg) @ Vgs
- 1.1nC @ 4.2V
- Input Capacitance (Ciss) @ Vds
- 130pF @ 10V
- Power - Max
- 500mW
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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