IPW65R041CFD
- Description：
- MOSFET N CH 650V 68.5A PG-TO247
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- CoolMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 68.5A (Tc)
- Rds On (Max) @ Id, Vgs
- 41 mOhm @ 33.1A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 3.3mA
- Gate Charge (Qg) @ Vgs
- 300nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 8400pF @ 100V
- Power - Max
- 500W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- PG-TO247-3
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