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IPW65R041CFD

Description:
MOSFET N CH 650V 68.5A PG-TO247
Manufacturer:
Infineon Technologies
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IPW65R041CFD

Product Information

Category
FETs - Single
Packaging
Tube
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
68.5A (Tc)
Rds On (Max) @ Id, Vgs
41 mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 3.3mA
Gate Charge (Qg) @ Vgs
300nC @ 10V
Input Capacitance (Ciss) @ Vds
8400pF @ 100V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3

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