IPB025N10N3 G
- Description：
- MOSFET N-CH 100V 180A TO263-7
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- OptiMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)
- Rds On (Max) @ Id, Vgs
- 2.5 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 275µA
- Gate Charge (Qg) @ Vgs
- 206nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 14800pF @ 50V
- Power - Max
- 300W
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
- Supplier Device Package
- PG-TO263-7
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