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IPD30N03S4L-14

Description:
MOSFET N-CH 30V 30A TO252-3
Manufacturer:
Infineon Technologies
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IPD30N03S4L-14

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
13.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 10µA
Gate Charge (Qg) @ Vgs
14nC @ 10V
Input Capacitance (Ciss) @ Vds
980pF @ 25V
Power - Max
31W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3

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