BSS670S2L H6327
- Description：
- MOSFET N-CH 55V 540MA SOT23
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- OptiMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 540mA (Ta)
- Rds On (Max) @ Id, Vgs
- 650 mOhm @ 270mA, 10V
- Vgs(th) (Max) @ Id
- 2V @ 2.7µA
- Gate Charge (Qg) @ Vgs
- 2.26nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 75pF @ 25V
- Power - Max
- 360mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- PG-SOT23-3
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