SIB452DK-T1-GE3
- Description：
- MOSFET N-CH 190V 1.5A SC75-6
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 190V
- Current - Continuous Drain (Id) @ 25°C
- 1.5A (Tc)
- Rds On (Max) @ Id, Vgs
- 2.4 Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 6.5nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 135pF @ 50V
- Power - Max
- 13W
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-75-6L
- Supplier Device Package
- PowerPAK® SC-75-6L Single
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