SIE820DF-T1-GE3
- Description：
- MOSFET N-CH D-S 20V POLARPAK
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Rds On (Max) @ Id, Vgs
- 3.5 mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 143nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 4300pF @ 10V
- Power - Max
- 104W
- Mounting Type
- Surface Mount
- Package / Case
- 10-PolarPAK® (S)
- Supplier Device Package
- 10-PolarPAK® (S)
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