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SI4190DY-T1-GE3

Description:
MOSFET N-CH 100V 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4190DY-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
8.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Gate Charge (Qg) @ Vgs
58nC @ 10V
Input Capacitance (Ciss) @ Vds
2000pF @ 50V
Power - Max
7.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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