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IPI020N06N
IPI020N06N
Description:
MOSFET N-CH 60V 29A TO262-3
Manufacturer:
Infineon Technologies
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IPI020N06N
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IPI020N06N
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Product Information
Category
FETs - Single
Packaging
Bulk
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs
2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.8V @ 143µA
Gate Charge (Qg) @ Vgs
106nC @ 10V
Input Capacitance (Ciss) @ Vds
7800pF @ 30V
Power - Max
3W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
PG-TO262-3
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