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BUZ32 H

Description:
MOSFET N-CH 200V 9.5A TO220-3
Manufacturer:
Infineon Technologies
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BUZ32 H

Product Information

Category
FETs - Single
Packaging
Tube
Series
SIPMOS®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Rds On (Max) @ Id, Vgs
400 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
530pF @ 25V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3

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