PMXB360ENEA
- Description：
- MOSFET N-CH 80V 1.1A 3DFN
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 80V
- Current - Continuous Drain (Id) @ 25°C
- 1.1A (Ta)
- Rds On (Max) @ Id, Vgs
- 450 mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id
- 2.7V @ 250µA
- Gate Charge (Qg) @ Vgs
- 4.5nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 130pF @ 40V
- Power - Max
- 400mW
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN Exposed Pad
- Supplier Device Package
- 3-DFN (1.1x1)
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