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PMXB360ENEA

Description:
MOSFET N-CH 80V 1.1A 3DFN
Manufacturer:
NXP Semiconductors
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PMXB360ENEA

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Rds On (Max) @ Id, Vgs
450 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) @ Vgs
4.5nC @ 10V
Input Capacitance (Ciss) @ Vds
130pF @ 40V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
3-XFDFN Exposed Pad
Supplier Device Package
3-DFN (1.1x1)

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