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TK6P60W,RVQ

Description:
MOSFET N CH 600V 6.2A DPAK
Manufacturer:
Toshiba Semiconductor and Storage
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TK6P60W,RVQ

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
6.2A (Ta)
Rds On (Max) @ Id, Vgs
820 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
3.7V @ 310µA
Gate Charge (Qg) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) @ Vds
390pF @ 300V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK

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