IPS65R1K4C6AKMA1
- Description：
- MOSFET N-CH 650V 3.2A TO-251
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- CoolMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 3.2A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.4 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- 10.5nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 225pF @ 100V
- Power - Max
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package
- PG-TO251-3
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