PMZB370UNE,315
- Description：
- MOSFET N-CH 30V 900MA DFN1006B-3
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 900mA (Ta)
- Rds On (Max) @ Id, Vgs
- 490 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id
- 1.05V @ 250µA
- Gate Charge (Qg) @ Vgs
- 1.16nC @ 15V
- Input Capacitance (Ciss) @ Vds
- 78pF @ 25V
- Power - Max
- 360mW
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Supplier Device Package
- 3-DFN1006B (0.6x1)
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