2N7635-GA
- Description：
- TRANS SJT 650V 4A TO-257
- Manufacturer：
- GeneSiC Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Bulk
- Series
- -
- FET Type
- Silicon Carbide, Normally Off
- FET Feature
- Super Junction
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc) (165°C)
- Rds On (Max) @ Id, Vgs
- 415 mOhm @ 4A
- Vgs(th) (Max) @ Id
- -
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 324pF @ 35V
- Power - Max
- 7W
- Mounting Type
- Through Hole
- Package / Case
- TO-257-3
- Supplier Device Package
- TO-257
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