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IRF1902TRPBF

Description:
MOSFET N-CH 20V 4.2A 8-SOIC
Manufacturer:
International Rectifier
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IRF1902TRPBF

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Rds On (Max) @ Id, Vgs
85 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) @ Vgs
7.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds
310pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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