SISS23DN-T1-GE3
- Description：
- MOSFET P-CH 20V PPAK 1212-8S
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 27A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs
- 4.5 mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 300nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 8840pF @ 15V
- Power - Max
- 4.8W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- PowerPAK® 1212-8S
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