2SK2009TE85LF
- Description：
- MOSF N CH 30V 200MA SMINI
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 200mA
- Rds On (Max) @ Id, Vgs
- 2 Ohm @ 50MA, 2.5V
- Vgs(th) (Max) @ Id
- 1.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 70pF @ 3V
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SC-59-3
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