IXFT18N100Q3
- Description：
- MOSFET N-CH 1000V 18A TO-268
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- HiPerFET™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Rds On (Max) @ Id, Vgs
- 660 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id
- 6.5V @ 4mA
- Gate Charge (Qg) @ Vgs
- 90nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 4890pF @ 25V
- Power - Max
- 830W
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package
- TO-268
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