IXTQ180N10T
- Description：
- MOSFET N-CH 100V 180A TO-3P
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- TrenchMV™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)
- Rds On (Max) @ Id, Vgs
- 6.4 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 151nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 6900pF @ 25V
- Power - Max
- 480W
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3P
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