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BSC046N10NS3GATMA1

Description:
MOSFET N-CH 100V 100A TDSON-8
Manufacturer:
Infineon Technologies
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BSC046N10NS3GATMA1

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
4.6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 120µA
Gate Charge (Qg) @ Vgs
63nC @ 10V
Input Capacitance (Ciss) @ Vds
4500pF @ 50V
Power - Max
156W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8 (5.15x6.15)

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