BUK6210-55C,118
- Description：
- MOSFET N-CH TRENCH DPAK
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 78A
- Rds On (Max) @ Id, Vgs
- 9.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id
- 2.8V @ 1mA
- Gate Charge (Qg) @ Vgs
- 63nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 4000pF @ 25V
- Power - Max
- 128W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- DPAK
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