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SPU02N60C3

Description:
MOSFET N-CH 650V 1.8A IPAK
Manufacturer:
Infineon Technologies
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SPU02N60C3

Product Information

Category
FETs - Single
Packaging
Tube
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Rds On (Max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 80µA
Gate Charge (Qg) @ Vgs
12.5nC @ 10V
Input Capacitance (Ciss) @ Vds
200pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package
PG-TO251-3

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