SQM120N04-1M7L-GE3
- Description：
- MOSFET N-CH 40V 120A TO263
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.7 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 285nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 14606pF @ 20V
- Power - Max
- 375W
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263
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