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PSMN6R3-120ESQ

Description:
MOSFET N-CH 120V I2PAK
Manufacturer:
NXP Semiconductors
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PSMN6R3-120ESQ

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
70A (Tmb)
Rds On (Max) @ Id, Vgs
6.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
207.1nC @ 10V
Input Capacitance (Ciss) @ Vds
11384pF @ 60V
Power - Max
405W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
TO-262-3

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