PSMN6R3-120ESQ
- Description：
- MOSFET N-CH 120V I2PAK
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 120V
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tmb)
- Rds On (Max) @ Id, Vgs
- 6.7 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 207.1nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 11384pF @ 60V
- Power - Max
- 405W
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package
- TO-262-3
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