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TK12E60W,S1VX

Description:
MOSFET N CH 600V 11.5A TO-220
Manufacturer:
Toshiba Semiconductor and Storage
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TK12E60W,S1VX

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Rds On (Max) @ Id, Vgs
300 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Gate Charge (Qg) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) @ Vds
890pF @ 300V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220

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