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BSC018NE2LSI

Description:
MOSFET N-CH 25V 29A TDSON-8
Manufacturer:
Infineon Technologies
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BSC018NE2LSI

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
1.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
36nC @ 10V
Input Capacitance (Ciss) @ Vds
2500pF @ 12V
Power - Max
69W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8

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