IRFDC20PBF
- Description：
- MOSFET N-CH 600V 320MA 4-DIP
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 320mA (Ta)
- Rds On (Max) @ Id, Vgs
- 4.4 Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 18nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 350pF @ 25V
- Power - Max
- 1W
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Supplier Device Package
- 4-DIP, Hexdip, HVMDIP
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