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DMN1019UFDE-7

Description:
MOSFET N CH 12V 11A U-DFN2020-6E
Manufacturer:
Diodes Incorporated
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DMN1019UFDE-7

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Rds On (Max) @ Id, Vgs
10 mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) @ Vgs
50.6nC @ 8V
Input Capacitance (Ciss) @ Vds
2425pF @ 10V
Power - Max
690mW
Mounting Type
Surface Mount
Package / Case
6-UDFN
Supplier Device Package
*

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