PSMN102-200Y,115
- Description：
- MOSFET N-CH 200V 21.5A LFPAK
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 21.5A (Tc)
- Rds On (Max) @ Id, Vgs
- 102 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 30.7nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1568pF @ 30V
- Power - Max
- 113W
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669, 4-LFPAK
- Supplier Device Package
- LFPAK56, Power-SO8
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