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PSMN102-200Y,115

Description:
MOSFET N-CH 200V 21.5A LFPAK
Manufacturer:
NXP Semiconductors
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PSMN102-200Y,115

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
21.5A (Tc)
Rds On (Max) @ Id, Vgs
102 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
30.7nC @ 10V
Input Capacitance (Ciss) @ Vds
1568pF @ 30V
Power - Max
113W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669, 4-LFPAK
Supplier Device Package
LFPAK56, Power-SO8

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