SI2312BDS-T1-E3
- Description：
- MOSFET N-CH 20V 3.9A SOT23-3
- Manufacturer：
- Vishay Siliconix
- Buy SI2312BDS-T1-E3 at Hotenda Tech . Hotenda Tech has the largest selection of electronic components, parts and suppliers . All products details and free PDF download of SI2312BDS-T1-E3 can be provided at http://www.hotenda.com/product-tags/SI2312BDS-T1-E3.html
Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 3.9A (Ta)
- Rds On (Max) @ Id, Vgs
- 31 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id
- 850mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 12nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- 750mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23-3 (TO-236)
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