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SI2302DS,215

Description:
MOSFET N-CH 20V 2.5A SOT23
Manufacturer:
NXP Semiconductors
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SI2302DS,215

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Rds On (Max) @ Id, Vgs
85 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
650mV @ 1mA
Gate Charge (Qg) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) @ Vds
230pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3

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