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DMN10H170SFG-7

Description:
MOSFET N-CH 100V 2.9A POWERDI
Manufacturer:
Diodes Incorporated
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DMN10H170SFG-7

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs
122 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
14.9nC @ 10V
Input Capacitance (Ciss) @ Vds
870.7pF @ 25V
Power - Max
940mW
Mounting Type
*
Package / Case
8-PowerVQFN
Supplier Device Package
PowerDI3333-8

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