PMN35EN,125
- Description：
- MOSFET N-CH 30V 5.1A 6TSOP
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 5.1A (Ta)
- Rds On (Max) @ Id, Vgs
- 31 mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 9.3nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 334pF @ 15V
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Supplier Device Package
- 6-TSOP
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