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IPD600N25N3 G

Description:
MOSFET N-CH 250V 25A TO252-3
Manufacturer:
Infineon Technologies
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IPD600N25N3 G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Rds On (Max) @ Id, Vgs
60 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 90µA
Gate Charge (Qg) @ Vgs
29nC @ 10V
Input Capacitance (Ciss) @ Vds
2350pF @ 100V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3

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