IPI041N12N3 G
- Description：
- MOSFET N-CH 120V 120A TO262-3
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- OptiMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 120V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Rds On (Max) @ Id, Vgs
- 4.1 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 270µA
- Gate Charge (Qg) @ Vgs
- 211nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 13800pF @ 60V
- Power - Max
- 300W
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package
- PG-TO262-3
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