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TK16E60W,S1VX

Description:
MOSFET N CH 600V 15.8A TO-220
Manufacturer:
Toshiba Semiconductor and Storage
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TK16E60W,S1VX

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
15.8A (Ta)
Rds On (Max) @ Id, Vgs
190 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790µA
Gate Charge (Qg) @ Vgs
38nC @ 10V
Input Capacitance (Ciss) @ Vds
1350pF @ 300V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220

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