SCT2160KEC
- Description：
- MOSFET N-CH 1200V 22A TO-247
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- SiCFET N-Channel, Silicon Carbide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Rds On (Max) @ Id, Vgs
- 208 mOhm @ 7A, 18V
- Vgs(th) (Max) @ Id
- 4V @ 2.5mA
- Gate Charge (Qg) @ Vgs
- 62nC @ 18V
- Input Capacitance (Ciss) @ Vds
- 1200pF @ 800V
- Power - Max
- 165W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247
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