C2M1000170D
- Description：
- MOSFET N-CH 1700V 4.9A TO247
- Manufacturer：
- Cree Inc
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- Z-FET™
- FET Type
- SiCFET N-Channel, Silicon Carbide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C
- 4.9A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.1 Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id
- 2.4V @ 100µA
- Gate Charge (Qg) @ Vgs
- 13nC @ 20V
- Input Capacitance (Ciss) @ Vds
- 191pF @ 1000V
- Power - Max
- 69W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
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