CSD16323Q3
- Description：
- MOSFET N-CH 25V 3.3X3.3 8-SON
- Manufacturer：
- Texas Instruments
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- NexFET™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 25V
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs
- 4.5 mOhm @ 24A, 8V
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 8.4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 1300pF @ 12.5V
- Power - Max
- 3W
- Mounting Type
- Surface Mount
- Package / Case
- 8-TDFN Exposed Pad
- Supplier Device Package
- 8-SON
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