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BSZ12DN20NS3G

Description:
MOSFET N-CH 200V 11.3A 8TSDSON
Manufacturer:
Infineon Technologies
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BSZ12DN20NS3G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Rds On (Max) @ Id, Vgs
125 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 25µA
Gate Charge (Qg) @ Vgs
8.7nC @ 10V
Input Capacitance (Ciss) @ Vds
680pF @ 100V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSDSON-8 (3.3x3.3)

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