SI1011X-T1-GE3
- Description：
- MOSFET P-CHAN 12V D-S SC-89
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)
- 12V
- Current - Continuous Drain (Id) @ 25°C
- 480mA (Ta)
- Rds On (Max) @ Id, Vgs
- 640 mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 62pF @ 6V
- Power - Max
- 190mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-89, SOT-490
- Supplier Device Package
- SC-89-3
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