BSM180D12P2C101
- Description：
- POWER MODULE 1200V 180A
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Modules
- Packaging
- Bulk
- Series
- -
- FET Type
- 2 N-Channel (Half Bridge)
- FET Feature
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 180A
- Rds On (Max) @ Id, Vgs
- -
- Vgs(th) (Max) @ Id
- 4V @ 35.2mA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 23000pF @ 10V
- Power - Max
- 1130W
- Mounting Type
- *
- Package / Case
- Module
- Supplier Device Package
- Module
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