APT26M100JCU2
- Description：
- MOSFET N CH 1000V 26A SIC SOT227
- Manufacturer：
- Microsemi Power Products Group
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Product Information
- Category
- FETs - Modules
- Packaging
- Bulk
- Series
- POWER MOS 8™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 26A
- Rds On (Max) @ Id, Vgs
- 396 mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 2.5mA
- Gate Charge (Qg) @ Vgs
- 305nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 7868pF @ 25V
- Power - Max
- 543W
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Supplier Device Package
- SOT-227
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