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SI3430DV-T1-GE3

Description:
MOSFET N-CH 100V 6-TSOP
Manufacturer:
Vishay Siliconix
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SI3430DV-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Rds On (Max) @ Id, Vgs
170 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
6.6nC @ 10V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.14W
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.065", 1.65mm Width)
Supplier Device Package
6-TSOP

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