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TPN22006NH,LQ

Description:
MOSFET N CH 60V 9A 8-TSON
Manufacturer:
Toshiba Semiconductor and Storage
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TPN22006NH,LQ

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Rds On (Max) @ Id, Vgs
22 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) @ Vds
710pF @ 30V
Power - Max
18W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-TSON Advance

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