IXFN180N25T
- Description：
- MOSFET N-CH 155A 250V SOT-227
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Modules
- Packaging
- Tube
- Series
- GigaMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 250V
- Current - Continuous Drain (Id) @ 25°C
- 164A
- Rds On (Max) @ Id, Vgs
- 12.9 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 8mA
- Gate Charge (Qg) @ Vgs
- 345nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 28000pF @ 25V
- Power - Max
- 900W
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Supplier Device Package
- SOT-227B
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